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Typical Characteristics
4000
1000
100
10us
100us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 C
o
STARTING T J = 150 C
10
1
LIMITED
BY PACKAGE
OPERATION IN THIS SINGLE PULSE
AREA MAY BE T J = MAX RATED
1ms
10ms
10
o
0.1
1
LIMITED BY rDS (on)
T C = 25 o C
10
DC
100
1
0.01
0.1 1 10 100
1000 5000
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
120
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
160
120
V GS = 10V
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5V
T J = 175 C
80
o
80
V GS = 4V
T J = 25 o C
40
T J = -55 o C
40
V GS = 3.5V
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
1
2
3
4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
40
30
T J = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
1.8
1.6
1.4
1.2
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
20
1.0
10
0.8
I D = 80A
V GS = 10V
0
3
4 5 6 7 8 9
10
0.6
-80
-40 0 40 80 120 160
200
V GS , GATE TO SOURCE VOLTAGE ( V )
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
T J , JUNCTION TEMPERATURE ( o C )
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8441 Rev.A2
5
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